wuxi nce power semiconductor co., ltd page v1.0 1 NCE4618SP pb free product halogen free compliance http://www.ncepower.com nce common-drain dual n-channel enhancem ent mode field effect transistor description the NCE4618SP uses advanced trench technology to provide excellent r ss(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. it is esd protected. this devi ce is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. package dimensions unit : mm general features v sss =24v,i s =6a 2.5v drive common-drain type 2kv hbm package information minimum packing quantity : 5,000 pcs./reel application lithium-ion battery charging and discharging switch equivalent circuit marking and pin assignment csp top view absolute maximum ratings (t a =25 unless otherwise noted) symbol parameter limit unit v sss source to source voltage 24 v v gss gate-source voltage 12 v i s source current(dc) 6 a i sp source current (pulse) 60 a p t total dissipation 1.6 w tch channel temperature 150 t stg storage temperature -55 to 150
wuxi nce power semiconductor co., ltd page v1.0 2 NCE4618SP pb free product halogen free compliance http://www.ncepower.com electrical characteristics (t a =25 unless otherwise noted) symbol parameter condition min typ max unit static parameters bv sss source to source breakdown voltage i s =1ma, v gs =0v, test circuit 1 24 - - v i sss zero- gate voltage source current vss=20v, vgs=0v, test circuit 1 - - 1 a i gss gate to source leakage current vss=0v , vgs= 8v, test circuit 2 - - 1 a v gs(off) cutoff voltage vss=10v, i s =1ma, test circuit 3 0.5 0.83 1.3 v |yg fs | forward transfer admittance v ss =10v,i s =3a, test circuit 4 6.5 - - s v gs =4.5v,i s =3a, test circuit 5 18.3 21.5 m ? v gs =4.0v,i s =3a, test circuit 5 19 22.5 m ? v gs =3.7v,i s =3a, test circuit 5 19.3 24 m ? v gs =3.1v,i s =3a, test circuit 5 20.3 27 m ? r ss(on) static source to source on-resistance v gs =2.5v,i s =3a, test circuit 5 23.0 32 m ? t d(on) turn-on delay time - 15 - ns t r turn-on rise time - 50 - ns t d(off) turn-off delay time - 40 - ns t f turn-off fall time v ss =10v,i s =3a v gs =4.5v test circuit 7 - 55 - ns q g total gate charge v ss =10v,i s =6a,v gs =4.5v test circuit 8 - 25.4 - nc v f(s-s) diode forward voltage v gs =0v,i s =6a - - 1.2 v
wuxi nce power semiconductor co., ltd page v1.0 3 NCE4618SP pb free product halogen free compliance http://www.ncepower.com test circuit
wuxi nce power semiconductor co., ltd page v1.0 4 NCE4618SP pb free product halogen free compliance http://www.ncepower.com typical electrical and therma l characteristics (curves) vss source -source voltage (v) figure 1 on-region characteristics vgs gate-source voltage (v) figure 2 transfer characteristics vgs gate-source voltage (v) figure3 on-resistance- gate-source voltage t a -ambient temperature( ) figure 4 rss(on)- ambient temperature qg gate charge (nc) figure 5 gate charge vss forward source- source voltage (v) figure 6 body-diode characteristics static source to source on state resistance , r ss(on) (m ? ) i s - reverse drain current (a) vgs gate-source voltage (v) i s - source current (a) i s - source current (a) static source to source on state resistance , r ss(on) (m ? )
wuxi nce power semiconductor co., ltd page v1.0 5 NCE4618SP pb free product halogen free compliance http://www.ncepower.com i s - source current (a) v ss source -source voltage (v) figure7 |yfs|-- i s figure 8 safe operat ion area t a -ambient temperature( ) figure 9 p t dissipation de-rating |yg fs | forward transfer admittance (s) i s - source current ( a ) p t - total dissi p ation ( w )
wuxi nce power semiconductor co., ltd page v1.0 6 NCE4618SP pb free product halogen free compliance http://www.ncepower.com attention: any and all nce power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce power representative nearest you before us ing any nce power products described or contained herein in such applications. nce power assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l nce power products described or contained herein. specifications of any and all nce powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce power believes information herein is accu rate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce power product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice.
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